High Speed Photodetector, 200-1100 nm UV-Silicon Detector, 118 MHz

The 818-BB-27 High Speed UV Enhanced Silicon Optical Detector consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large 2.55 mm active diameter and 3 ns rise time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply. It is equivalent to Coherent's Model ET-2070 (P/N 120-10134-0001).

UV-Enhanced Silicon Free Space Detector

The 818-BB-27 consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large active area and fast response time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply.

Optical Post Mounting

An 8-32 threaded hole at the bottom of 818-BB biased photoreceivers allows for optical post mounting.

Handle With ESD Care

These detectors are very susceptible to damage by electrostatic discharge (ESD). Please use ESD protective measures, like the FK-STRAP , when unpacking and handling these devices.

Specifications

Technical Specs

Optical Input
Free Space
Device Type
Biased Detector
Detector Diameter
2.55 mm
Detector Material
UV Enhanced Silicon
Detector Type
PIN
Acceptance Angle
50°
Wavelength Range
200-1100 nm
3 dB Bandwidth
DC to 118 MHz
Rise Time
3 ns
Responsivity
0.56 A/W @ 830 nm
Output Connector
BNC

Bias Voltage
24 V
Cut-off Frequency
118 MHz
Dark Current
<10nA
Junction Capacitance
<25 pF
Measurement Type
Beam shape, frequency
Reverse Breakdown
150 V
NEP
<0.1 pW/√Hz
Fall Time
3ns
Saturation Current
2.5 mA
Thread Type
8-32 and M4

Optical Input
Free Space
Device Type
Biased Detector
Detector Diameter
2.55 mm
Detector Material
UV Enhanced Silicon
Detector Type
PIN
Acceptance Angle
50°
Wavelength Range
200-1100 nm
3 dB Bandwidth
DC to 118 MHz
Rise Time
3 ns
Responsivity
0.56 A/W @ 830 nm
Output Connector
BNC

Bias Voltage
24 V
Cut-off Frequency
118 MHz
Dark Current
<10nA
Junction Capacitance
<25 pF
Measurement Type
Beam shape, frequency
Reverse Breakdown
150 V
NEP
<0.1 pW/√Hz
Fall Time
3ns
Saturation Current
2.5 mA
Thread Type
8-32 and M4

Resources & Downloads

3D Product Models

2D Product Drawings

Silicon Photodetectors Datasheet(663 kB, PDF)
Non-amplified Photodetectors User's Manual(788.3 kB, PDF)
818-BB Battery Installation(1.2 MB, PDF)
MKS EU RoHS2 - 818-BB Detectors(287.8 kB, PDF)
Optical Receiver Finder

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